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High-Performance and Multi-Functional RF Power MOSFETs
Our Radio-Frequency (RF) power MOSFETs support frequencies ranging from 2 MHz to 150 MHz, supply voltages from 50V to 300V and output power from 50W to 3 kW. In the past, RF power MOSFETs were limited to applications of 50V or less. We have combined our high-voltage MOSFET technology with RF-specific die geometries to overcome this design limitation. Our VRF family of RF MOSFETs includes replacements for industry-standard RF transistors that offer improved ruggedness and optimized performance). Devices in our DRF family feature a proprietary anti-ring function to eliminate cross conduction in bridge or push-pull topologies. These devices can be externally selected in either an inverting or non-inverting configuration.
Advantages of RF Power MOSFETs
High Efficiency
RF power MOSFETs can achieve high efficiency in converting DC power into RF power, reducing heat sinking requirements and power losses in high-power systems.
High Linearity
These MOSFETs can provide high linearity, which is important for amplifying complex signals without distortion, especially in communication systems where signal integrity is crucial.
High Power Density
They can deliver high power output relative to their size, which is beneficial for applications where space is at a premium, and the power delivered is twice the voltage, so doubling the operating voltage leads to four times the output power.
Ruggedness
RF power MOSFETs are known for their ruggedness and ability to withstand high Voltage Standing Wave Ratios (VSWR), which is a measure of how well the RF device can survive reflected power during load mismatch conditions.
Thermal Stability
MOSFETs have good thermal stability and can handle significant amounts of heat, which is beneficial for reliability and longevity in high-power applications.
Ease of Matching
High-voltage MOSFETs have a higher output impedance than low-voltage RF MOSFETs, making them easier to match to 50-Ohm systems, which is the standard impedance in most RF systems, simplifying the design of the matching network and reducing power losses.
Scalability
The performance of RF power MOSFETs can be scaled by combining multiple devices in parallel or in push-pull configurations to achieve higher power levels.
Integration
These MOSFETs can be integrated with other components on a single RF power module, which can reduce the overall system size and improve performance.
