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Robust Silicon Carbide (SiC) Bare Die Solutions
Our mSiC™ bare die MOSFETs and Schottky Barrier Diodes (SBDs) are excellent options for advanced power circuits. They are designed to provide lower system cost, faster time to market and lower risk. Our solutions come with an oxide lifetime of more than 100 years and a stable body diode, coupled with best-in-class avalanche ruggedness, short circuit capability and neutron susceptibility.
Lower System Cost
- Device redundancy is not needed
- Ability to focus on the next generation of products instead of redesigning
- No supply interruption of production
Faster to Market
- Minimization of system development time
- Earlier and more revenue
- Ability to accelerate your innovation process
Lower Risk
- Higher reliability and system lifetime
- Lower component count
- Multiple epi sources and fabs
Product Highlights
mSiC bare die MOSFETs and diodes provide customized packaging to enable system-level optimization of your application for performance and efficiency. You can custom tailor these SiC solutions to your application and requirements to maximize power density within your design constraints.
Features
- High-temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
- Industry-leading gate oxide stability (< 100 mV Vth shift) and gate oxide lifetime
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
- High reverse current capability
Benefits
- Higher switching frequency and efficiency
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Improved cooling requirements for reduced system cost
Our Advantage
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched Unclamped Inductive Switching (UIS) avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice
