When you are looking for a Bipolar Junction Transistor (BJT), you need the assurance that it has been well tested to operate reliably, especially in the harsh environments found in industrial, aerospace and defense applications. It can be difficult to find a supplier that has invested in the right equipment and processes to provide products that will meet your specific requirements.
Our BJTs have undergone rigorous screening via our Enhanced Low Dose Rate Sensitivity (ELDRS) testing to ensure that they operate reliably in environments ranging from less than 100K Total Ionizing Dose (TID) up to 1M TID. They are manufactured in multiple sites that are approved by the Defense Logistics Agency (DLA) and are manufactured and assembled in our DLA-qualified facilities. In addition, we have our own ELDRS testing capabilities at our Lawrence, Massachusetts, facility.
These devices deliver a higher trans-conductance than MOSFETs, which eliminates the need for separate gate drivers in your design. They also cover a wide range of voltage requirements and are available in an array of package options that are capable of handling high current densities.
These military-grade transistors have been manufactured to withstand varying levels of radiation exposure. They are part of the Joint Army Navy (JAN) designation system used to specify components procured for military applications. These designations ensure that electronic components used in critical military and aerospace applications can operate reliably in radiation-rich environments.
Discover how our JAN transistors offer military-standard Enhanced Low Dose Radiation Sensitivity (ELDRS), ensuring unmatched reliability and performance in aerospace and defense applications. These transistors are specifically designed to withstand the harsh conditions of space and military environments, providing robust and dependable operation even under low-dose radiation exposure. By meeting stringent military standards, our JAN transistors deliver the reliability and durability required for critical missions and high-stakes operations in the aerospace and defense sectors.
Field-effect transistors (FETs) are a type of transistor that controls the flow of electrical current using an electric field. FETs are voltage-controlled devices, which allows them to have very high input impedance. This makes them a great choice for circuits where minimal power consumption is desired, such as amplifiers and switches. Junction Field-Effect Transistors (JFETs) are offered in two types, N-channel and P-channel, depending on the type of semiconductor material used in the channel. N-channel JFETs are predominantly used because electrons, which are the charge carriers in these devices, have greater mobility than the holes that act as charge carriers in P-channel JFETs.
A Darlington transistor consists of two BJTs connected to facilitate compounded current amplification. These transistors are packaged as an array of seven or eight Darlington pairs in an IC.
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Single-package combinations are offered as Size, Weight and Power (SWAP) solutions for designs with minimal board space and small-form-factor. The following combinations are offered:
Complementary transistors are NPN and PNP transistors with nearly identical characteristics.
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NPN transistors are used to sink current.
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PNP transistors are used to source current
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Our high-performing BJT products can be used in applications that require very high current densities, radiation tolerance and significant weight reduction for successful trips to the Moon, Mars and beyond.
Our BJTs help address the need for secure, reliable electronics and systems that are used in defense applications, such as vehicles and weaponry. These systems have special requirements such as increased automation, portability, longer mission life and enhanced situational awareness.
We are here to support you. Contact our Client Success Team to get assistance with your design.