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High-Reliability and High-Current-Density BJTs, Tested in the Industry's Largest 19500 Burn-in Facility


When you are looking for a Bipolar Junction Transistor (BJT), you need the assurance that it has been well tested to operate reliably, especially in the harsh environments found in industrial, aerospace and defense applications. It can be difficult to find a supplier that has invested in the right equipment and processes to provide products that will meet your specific requirements.

Our BJTs have undergone rigorous screening via our Enhanced Low Dose Rate Sensitivity (ELDRS) testing to ensure that they operate reliably in environments ranging from less than 100K Total Ionizing Dose (TID) up to 1M TID. They are manufactured in multiple sites that are approved by the Defense Logistics Agency (DLA) and are manufactured and assembled in our DLA-qualified facilities. In addition, we have our own ELDRS testing capabilities at our Lawrence, Massachusetts, facility. 

These devices deliver a higher trans-conductance than MOSFETs, which eliminates the need for separate gate drivers in your design. They also cover a wide range of voltage requirements and are available in an array of package options that are capable of handling high current densities.  

Featured Products: JAN Transistors


Military Standard Enhanced Low-Dose Radiation Sensitivity (ELDRS) BJTs

These military-grade transistors have been manufactured to withstand varying levels of radiation exposure. They are part of the Joint Army Navy (JAN) designation system used to specify components procured for military applications. These designations ensure that electronic components used in critical military and aerospace applications can operate reliably in radiation-rich environments.

JAN Transistor Designations

  • JANSE Transistors: Able to withstand up to 30 Krad per unit of absorbed radiation dose
  • JANSK Transistors: Able to withstand up to 50 Krad per unit of absorbed radiation dose
  • JANSU Transistors: Able to withstand up to 100 Krad per unit of absorbed radiation dose

JAN Transistors: Military-Standard Radiation Tolerance for Aerospace and Defense

Discover how our JAN transistors offer military-standard Enhanced Low Dose Radiation Sensitivity (ELDRS), ensuring unmatched reliability and performance in aerospace and defense applications. These transistors are specifically designed to withstand the harsh conditions of space and military environments, providing robust and dependable operation even under low-dose radiation exposure. By meeting stringent military standards, our JAN transistors deliver the reliability and durability required for critical missions and high-stakes operations in the aerospace and defense sectors.

Product Categories


Field-Effect Transistors (FETs)

Field-effect transistors (FETs) are a type of transistor that controls the flow of electrical current using an electric field. FETs are voltage-controlled devices, which allows them to have very high input impedance. This makes them a great choice for circuits where minimal power consumption is desired, such as amplifiers and switches. Junction Field-Effect Transistors (JFETs) are offered in two types, N-channel and P-channel, depending on the type of semiconductor material used in the channel.  N-channel JFETs are predominantly used because electrons, which are the charge carriers in these devices, have greater mobility than the holes that act as charge carriers in P-channel JFETs.

Darlington Transistors/Arrays

A Darlington transistor consists of two BJTs connected to facilitate compounded current amplification. These transistors are packaged as an array of seven or eight Darlington pairs in an IC.
  • Compact because of a shared collector
  • Offer a very high current gain even with low base current
  • Used in applications such as power regulators, motor controllers, audio amplifiers and opto-isolator circuits
  • Integrate eight NPN Darlington pairs with internal suppression diodes to drive lamps, relays and solenoids
  • Feature open collector outputs with breakdown voltages greater than 50V and current carrying capabilities of 500mA

Single-Package NPN/PNP Combinations

Single-package combinations are offered as Size, Weight and Power (SWAP) solutions for designs with minimal board space and small-form-factor. The following combinations are offered:

  • NPN Dual
  • NPN Dual Matched
  • NPN Quad
  • PNP Dual
  • PNP Dual Matched
  • PNP Quad

NPN/PNP Complementary Transistors

Complementary transistors are NPN and PNP transistors with nearly identical characteristics.

  • Commonly used in power amplifier designs, such as class B amplifiers

NPN Transistors

NPN transistors are used to sink current.

  • Commonly used in switching applications, where a faster switching rate is preferred (low-side switching)
  • Also used for signal amplification, usually switching from the ground side of the circuit where a current sink is required

 

PNP Transistors

PNP transistors are used to source current

  • PNP transistors have lower turn-on voltage (better for high-speed applications)
  • Commonly used in level setting and turning a circuit on and off, as well as high-side switching

 

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Applications


Aerospace

Our high-performing BJT products can be used in applications that require very high current densities, radiation tolerance and significant weight reduction for successful trips to the Moon, Mars and beyond.

Defense

Our BJTs help address the need for secure, reliable electronics and systems that are used in defense applications, such as vehicles and weaponry. These systems have special requirements such as increased automation, portability, longer mission life and enhanced situational awareness.

Need Some Help?


We are here to support you. Contact our Client Success Team to get assistance with your design.