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Extreme-Environment Exposure Solutions for Military and Space Applications


Finding high-quality MOSFETs that have been thoroughly tested to withstand the harsh environments found in aerospace and defense applications can be challenging for any design engineer. But locating a reputable company that has a long history of providing devices for the aerospace and defense industry is even more essential to a successful design. Recognizing these requirements, we have developed our portfolio of hermetic power MOSFETs with our M6 technology to provide extreme reliability and enhanced radiation hardness for space and military applications. These radiation-hardened MOSFETs feature low RDS (on) and a low total gate charge to meet the requirements of an even wider array of applications. We also offer the largest selection of JANS-qualified products in the world. JANS is the most rigorous level of screening and acceptance requirements available to ensure the performance, quality and reliability of discrete semiconductors intended for space flight.  

Radiation-Hardened Power MOSFET Products


Our power MOSFETs meet the requirements of total-dose and single-event environments, and the M6 technology allows them to perform well in extreme-environment applications.  

JANSR2N7593U3 MOSFET MIL-PRF-19500/746

Non-JANS Version: MRH25N12U3SR

  • 250V, 12.4A MOSFET
  • RDS(on) of 0.21 Ohms
  • Qualified to 100K Total Ionizing Dose (TID)
  • M6 technology will remain within specification in radiation environments of 300 Krad TID and greater 

JANSR2N7591U3 MOSFET MIL-PRF-19500/746

Non-JANS Version: MRH20N16U3SR

  • 200V, 16A MOSFET
  • RDS(on) of 0.13 Ohms
  • Qualified to 100K TID
  • M6 technology will remain within specification in radiation environments of 300 Krad TID and greater

JANSR2N7589U3 MOSFET MIL-PRF-19500/746

Non-JANS Version: MRH15N19U3SR

  • 150V, 19A MOSFET
  • RDS(on) of 0.088 Ohms
  • Qualified up to 100K TID
  • M6 technology will remain within specification in radiation environments of 300 Krad TID and greater

JANSR2N7587U3 MOSFET MIL-PRF-19500/746

Non-JANS Version: MRH10N22U3SR

  • 100V, 22A MOSFET
  • RDS(on) of 0.042 Ohms
  • JANSF version qualified up to 300K TID
  • M6 technology will remain within specification in radiation environments of 300 Krad TID and greater

Bipolar Junction Transistors (BJTs)


These devices deliver a higher trans-conductance than MOSFETs, which eliminates the need for separate gate drivers in your design. They also cover a wide range of voltage requirements and are available in an array of package options that are capable of handling high current densities. 

Discover the LX7720: Advanced Radiation-Hardened Motor Driver for Spacecraft Precision


The LX7720 is a radiation-hardened spacecraft motor driver designed for robust performance in space environments. Featuring four half-bridge drivers with floating current sense for motor coil driving and six bi-level inputs, this advanced motor controller is an excellent choice for precise motor control and position sensing in spacecraft applications.

Need Some Help?


We are here to support you. Contact our Client Success Team to get assistance with your design.