SST25VF080B | Microchip Technology

Overview

  • Density (Organization):8 Mbit
  • Operating Voltage Min. (V):2.7
  • Oper Voltage Max (V):3.6
  • Max. Clock Freq.:50 MHz
  • Page Size (bytes):0
  • Write Protected:False
  • Write Protect Scheme:Quarter, Half, Whole Array
  • Endurance:100,000
  • Data Retention (Years):100
  • Bus Modes:SPI
  • Battery Backup:False
Read more
  • Single Voltage Read and Write Operations– 2.7-3.6V
  • Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)
  • Endurance: 100,000 Cycles (typical)
  • Greater than 100 years Data Retention
  • Program & Erase Current: 30mA (max)
  • Active Read Current: 10 mA (typical)
  • Standby Current: 5 µA (typical)
  • Uniform 4 KByte sectors
  • Uniform 32 KByte & 64 KByte overlay blocks
  • Chip-Erase Time: 35 ms (typical)
  • Sector-/Block-Erase Time: 18 ms (typical)
  • Byte-Program Time: 7 µs (typical)
  • Decrease total chip programming time over Byte-Program operations
  • Software polling the BUSY bit in Status Register
  • Busy Status readout on SO pin in AAI Mode
  • Suspends a serial sequence to the memory without deselecting the device
  • Enables/Disables the Lock-Down function of the status register
  • Write protection through Block-Protection bits in the status register
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C
  • Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
  • All devices are RoHS compliant
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sst25vf080b
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