SST25VF016B | Microchip Technology

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  • Density (Organization):16 Mbit
  • Operating Voltage Min. (V):2.7
  • Oper Voltage Max (V):3.6
  • Max. Clock Freq.:50 MHz
  • Page Size (bytes):0
  • Write Protected:False
  • Write Protect Scheme:Quarter, Half, Whole Array
  • Endurance:100,000
  • Data Retention (Years):100
  • Bus Modes:SPI
  • Battery Backup:False
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  • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
  • Up to 50 MHz Clock Frequency
  • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
  • Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)
  • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
  • Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)
  • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
  • End-of-Write Detection– Software polling the BUSY bit in Status Register– Busy Status readout on SO pin in AAI Mode
  • Hold Pin (HOLD#)– Suspends a serial sequence to the memorywithout deselecting the device
  • Write Protection (WP#)– Enables/Disables the Lock-Down function of thestatus register
  • Software Write Protection– Write protection through Block-Protection bits instatus register
  • Temperature Range– Commercial: 0°C to +70°C– Industrial: -40°C to +85°C
  • Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)
  • All non-Pb (lead-free) devices are RoHS compliant
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