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1200V, 4.2 mOhm, SP6C, Phase Leg mSiC™ MOSFET Module
Overview
- Silicon Type:SiC MOSFET
- Configuration:Phase Leg
- VDSS (V):1200
- Current A (ampere):394
- RDSon (mΩ) typ:4.2
- Total Gate Charge (nC):1392
- Rise Time tR ns (nanosecond):55
- Fall Time tF ns (nanosecond):67
- MaxOperatingJunctionTemp:175
- PKG:SP6C
- SiC Power MOSFET
- Low RDS(on)
- High temperature performance
- Kelvin source for easy drive
- Low stray inductance
- Internal thermistor for temperature monitoring (optional)
- High efficiency converter
- Outstanding performance at high frequency operation
- Stable temperature behavior
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- RoHS Compliant
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Tools And Software
Development Environment
| Tools |
|---|
 Advanced Converter-Level Simulation for SiC Devices
Adopt SiC with ease, speed and confidence. The MPLAB SiC Power Simulator calculates the power losses and estimates junction temperature for SiC devices using lab testing data for common power converter topologies in DC-AC, AC-DC and DC-DC applications. This simulator allows you to evaluate device performance quickly in your power converter design.
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["developmentenvironment","Development Environment"] ,
["emulators","Emulator and Debuggers"] ,
["demoevaluationboards","Demo & Evaluation Boards"] ,
["programmerrelations","Programmers"] ,
["thirdpartytools","3rd Party Tools"] ,
["legacy","Legacy"] ,
["softwarelibraries","Library and Firmware"]
referencedesigns,Reference Designs:
codeexamples,Code Examples:
ibisboarddesignfiles,Board Design Files: