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N-Channel Depletion-Mode DMOS FET
Overview
- BVdss min (V):500
- Rds (on) max (Ohms):1000
- Vgs(off) Min V (volt):-1.0
- Vgs(off) Max V (volt):-3.0
- Package:SOT-23
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
- ESD gate protection
The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
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referencedesigns,Reference Designs:
codeexamples,Code Examples:
ibisboarddesignfiles,Board Design Files: