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1200V, 40 mOhm, Discrete mSiC™ MOSFET
Overview
- Drain Source Voltage (V) [max]:1200
- Continuous Drain Current [I(D)] (max) (A):53-67
- On-State Resistance (milliohms) [typ] (mΩ):40
- Junction Temperature (°C) [max] (°C) °C (degrees Celsius):-55 - 175°C
- Package Type:D3PAK, SOT-227, TO-247, TO-247-4L, TO-247-4L Notch, Die
MSC040SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
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Tools And Software
Development Environment
| Tools |
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 Advanced Converter-Level Simulation for SiC Devices
Adopt SiC with ease, speed and confidence. The MPLAB SiC Power Simulator calculates the power losses and estimates junction temperature for SiC devices using lab testing data for common power converter topologies in DC-AC, AC-DC and DC-DC applications. This simulator allows you to evaluate device performance quickly in your power converter design.
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["developmentenvironment","Development Environment"] ,
["emulators","Emulator and Debuggers"] ,
["demoevaluationboards","Demo & Evaluation Boards"] ,
["programmerrelations","Programmers"] ,
["thirdpartytools","3rd Party Tools"] ,
["legacy","Legacy"] ,
["softwarelibraries","Library and Firmware"]
referencedesigns,Reference Designs:
codeexamples,Code Examples:
ibisboarddesignfiles,Board Design Files: