Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
Eliminating Parasitic Oscillation between Parallel MOSFETs
High Frequency Resonant Half Bridge
Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
Introduction to MOSFETs
Latest Technology PT IGBTs vs. Power MOSFETs
Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
Turn Off Snubber Design for High Frequency Modules
VDS(on) VCE(sat) Measurement
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body
Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
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APT20M11JLL MOSFET MOS7 200 V 11 mOhm SOT-227 Datasheet
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