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Discrete Silicon Carbide (SiC) Schottky Barrier Diode Solutions
Lower System Cost
- Device redundancy is not needed
- Ability to focus on the next generation of products instead of redesigning
- No supply interruption of production
Faster to Market
- Minimization of system development time
- Earlier and more revenue
- Ability to accelerate your innovation process
Lower Risk
- Higher reliability and system lifetime
- Lower component count
- Multiple epi sources and fabs
Highlights
mSiC diodes are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at a low reverse current. Along with reduced switching loss, our SBDs reach a much higher breakdown voltage than silicon and exhibit high repetitive Unclamped Inductive Switching (UIS) capability without degradation.
Features
- No reverse recovery charge
- High reverse current capability
- Low forward voltage
- Low leakage current
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
- High temperature operation (Tj = 175°C)
Benefits
- Low switching loss
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Reduced cooling requirements
- Lower system cost
Our Advantage
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched UIS avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice
mSiC Diode Technology
Our mSiC Schottky Barrier Diodes (SBDs) increase efficiency and add superior reliability in high-voltage applications. SiC diodes exhibit higher breakdown voltage with a lower forward voltage drop and a significantly shorter reverse recover time. mSiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss, enabling more efficient power systems.
Featured Product: Industry-Leading 3.3 kV, 90A mSiC SBD
mSiC 3.3 kV SiC SBDs feature a substantial current rating of 90A with unrivaled ruggedness and performan. These devices will simplify your design and help you develop higher-power systems with fewer components so you can create smaller, lighter and more efficient solutions.
Similar Devices
Evaluation and Development Kits
Evaluation and Reference Designs
Accelerate your development of highly efficient, rugged and reliable systems while reducing your time to market with our time-saving reference designs, technology demonstrators and evaluation kits.
Development Kits
Our SiC development kits include the hardware and software elements required to rapidly optimize the performance of SiC modules and systems. They can accelerate your time to market by up to six months.
