SST39VF800A | Microchip Technology

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  • Density (Organization):8 Mbit
  • Operating Voltage Min. (V):2.7
  • Oper Voltage Max (V):3.6
  • Max. Clock Freq.:0 kHz
  • Read Access Speed (Par Flash):70 ns
  • Page Size (bytes):0
  • Write Protected:False
  • Endurance:100,000
  • Data Retention (Years):100
  • Battery Backup:False
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    • Organized as 512K x16
    • Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF200A/400A/800A
    • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
    • Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
    • Sector-Erase Capability– Uniform 2 KWord sectors
    • Block-Erase Capability– Uniform 32 KWord blocks
    • Fast Read Access Time– 70 ns for SST39VF800A
    • Latched Address and Data
    • Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39VF800A
    • Automatic Write Timing– Internal VPP Generation
    • End-of-Write Detection– Toggle Bit– Data# Polling
    • CMOS I/O Compatibility
    • JEDEC Standard– Flash EEPROM Pinouts and command sets
    • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
    • All non-Pb (lead-free) devices are RoHS compliant
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