Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF200A/400A/800A
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Fast Read Access Time– 70 ns for SST39VF800A
Latched Address and Data
Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39VF800A
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
All non-Pb (lead-free) devices are RoHS compliant
*Not Recommended For New Design*
The SST39VF800A is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800A writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Use your up or down key to switch images.
Documentation
Documents
SDE Resources
Online Assets
Filter by Document Type
Search Documentation
Title
Document Category
DS Number
SST39LF200A/400A/800A and SST39VF200A/400A/800A - 2-Mbit/4-Mbit/8-Mbit (x16) Multi-Purpose Flash
Please visit the full parametric chart. If you still cannot find the
chart you are looking for, please complete our
Website
Feedback Form
to notify us of this issue.