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1200V, 12.5 mOhm, SP3F, Full Bridge mSiC™ MOSFET Module
Overview
- Configuration:Full Bridge
- Silicon Type:SiC MOSFET
- VDSS (V):1200
- Current A (ampere):138
- RDSon (mΩ) typ:12.5
- Total Gate Charge (nC):464
- Rise Time tR ns (nanosecond):30
- Fall Time tF ns (nanosecond):25
- MaxOperatingJunctionTemp:175
- PKG:SP3F
SiC Power MOSFET
Low RDS(on)
High temperature performance
Kelvin source for easy drive
Low stray inductance
Internal thermistor for temperature monitoring (optional)
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Low RDS(on)
High temperature performance
Kelvin source for easy drive
Low stray inductance
Internal thermistor for temperature monitoring (optional)
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Tools And Software
Development Environment
| Tools |
|---|
 Advanced Converter-Level Simulation for SiC Devices
Adopt SiC with ease, speed and confidence. The MPLAB SiC Power Simulator calculates the power losses and estimates junction temperature for SiC devices using lab testing data for common power converter topologies in DC-AC, AC-DC and DC-DC applications. This simulator allows you to evaluate device performance quickly in your power converter design.
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["developmentenvironment","Development Environment"] ,
["emulators","Emulator and Debuggers"] ,
["demoevaluationboards","Demo & Evaluation Boards"] ,
["programmerrelations","Programmers"] ,
["thirdpartytools","3rd Party Tools"] ,
["legacy","Legacy"] ,
["softwarelibraries","Library and Firmware"]
referencedesigns,Reference Designs:
codeexamples,Code Examples:
ibisboarddesignfiles,Board Design Files: