TN2106 | Microchip Technology

Overview

  • BVdss min (V):60
  • Rds (on) max (Ohms):2.5
  • CISSmax (pF):50
  • Vgs(th) max (V):2.0
  • Package:TO-92, SOT-23
    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain
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TN2106
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