SST38LF6401RT | Microchip Technology

SST38LF6401RT

Status: In Production
64-Mbit (x16) Radiation Tolerant Flash

Overview

    Main Characteristics
  • Organized as 4M x16
  • Fast Read and Page Read Access Times: 90 ns Read access time / 25 ns Page Read access times / 4-Word Page Read buffer
  • Latched Address and Data
  • Fast Erase Times: Sector-Erase Time: 18 ms (typical) / Block-Erase Time: 18 ms (typical) / Chip-Erase Time: 40 ms (typical)
  • Erase-Suspend/-Resume Capabilities
  • Fast Word and Write-Buffer ProgrammingTimes: Word-Program Time: 7 µs (typical) / Write Buffer Programming Time: 1.75 µs Word(typical) / 16-Word Write Buffer
  • Automatic Write Timing : Internal VPP Generation
  • End-of-Write Detection : Toggle Bits / Data# Polling / RY/BY# Output
  • Hardware Reset Pin (RST#)
  • CMOS I/O Compatibility
  • JEDEC Standard: Flash EEPROM Pinouts and command sets
  • CFI Compliant
    Superior Reliability
  • Endurance : 10000 cycles minimum
  • Greater than 20 years data retention
  • Low Power Consumption (typical values at 5 MHz) : Active Current: 4 mA (typical) / Standby Current: 3 µA (typical) / Auto Low Power Mode: 3 µA (typical)
  • Security-ID Feature : 256 Word, user One-Time-Programmable / 128-bit Unique ID
    Protection and Security Features
  • Hardware Boot Block Protection/WP# Input Pin
  • Uniform (32 KWord) and Non-Uniform (8 KWord) options available
  • User-controlled individual block (32 KWord) protection, using software only methods
  • Password protection
    Voltage
  • Single Voltage Read and Write Operations 3.0-3.6V
    Radiation Performances
  • No Single Event Latch-up Below a LET Threshold of 78 MeV.cm2 /mg @125°C
  • Single Event Upset (SEU) Rate < 5.18 x 10-22 upsets/bit-day
  • Total ionizing dose : Unbiased – 75 krad (Si)(Read)/50 krad (Si)(Write) | Biased – 50 krad (Si) (Read)/50 krad (Si) (Write)
    Packages
  • 48-lead TSOP
  • 48-lead Ceramic dual flat pack
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SST38LF6401RT
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